High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure-Reference-Cited by-全球学者库

High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

Published:2016-07-06 Issue:36 Volume:28 Page:7978-7983
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Rong Xin¹,Wang Xinqiang¹²,Ivanov Sergey V.³,Jiang Xinhe¹,Chen Guang¹,Wang Ping¹,Wang Weiying¹,He Chenguang¹,Wang Tao¹,Schulz Tobias⁴,Albrecht Martin⁴,Jmerik Valentin N.³,Toropov Alexey A.³,Ratnikov Viacheslav V.³,Kozlovsky Vladimir I.⁵⁶,Martovitsky Victor P.⁵,Jin Peng⁷,Xu Fujun¹,Yang Xuelin¹,Qin Zhixin¹,Ge Weikun¹,Shi Junjie¹,Shen Bo¹²

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics; School of Physics; Peking University; Beijing 100871 P. R. China

2. Collaborative Innovation Center of Quantum Matter; Beijing 100871 P. R. China

3. Ioffe Institute; Polytekhnicheskaya 26 St. Petersburg 194021 Russia

4. Leibniz Institute for Crystal Growth; Berlin 12489 Germany

5. Lebedev Physical Institute; Russian Academy of Sciences; Leninsky pr. 53 Moscow 119991 Russia

6. National Research Nuclear University MEPhI; Kashirskoye shosse 31 Moscow 115409 Russia

7. Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices; Institute of Semiconductors; CAS; Beijing 100083 P. R. China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference41 articles.

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3. Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure

4. Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence

5. Realization of a High-Performance GaN UV Detector by Nanoplasmonic Enhancement

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