Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation
Author:
Funder
Japan Science and Technology Agency
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/RevModPhys.87.1133/fulltext
Reference49 articles.
1. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
2. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
3. Growth of GaN and AlGaN for UV/blue p-n junction diodes
4. Infrared lattice vibration of vapour-grown AlN
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