Author:
Fomenkov Igor,Brandt David,Ershov Alex,Schafgans Alexander,Tao Yezheng,Vaschenko Georgiy,Rokitski Slava,Kats Michael,Vargas Michael,Purvis Michael,Rafac Rob,La Fontaine Bruno,De Dea Silvia,LaForge Andrew,Stewart Jayson,Chang Steven,Graham Matthew,Riggs Daniel,Taylor Ted,Abraham Mathew,Brown Daniel
Abstract
AbstractExtreme ultraviolet (EUV) lithography is expected to succeed in 193-nm immersion multi-patterning technology for sub-10-nm critical layer patterning. In order to be successful, EUV lithography has to demonstrate that it can satisfy the industry requirements in the following critical areas: power, dose stability, etendue, spectral content, and lifetime. Currently, development of second-generation laser-produced plasma (LPP) light sources for the ASML’s NXE:3300B EUV scanner is complete, and first units are installed and operational at chipmaker customers. We describe different aspects and performance characteristics of the sources, dose stability results, power scaling, and availability data for EUV sources and also report new development results.
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
103 articles.
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