1. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Metastable atomic-ordered configurations for Al1/2Ga1/2N predicted by Monte-Ca..
2. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Impact of unintentionally formed compositionally graded layer on carrier injection efficiency in AlG..
3. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs
4. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 The micro-LED roadmap: status quo and prospects
5. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Impact of graphene state on the orientation of III-nitride
6. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped ..
7. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Growth modification via indium surfactant for InGaN/GaN green LED
8. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on..
9. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars
10. Moungi G,Bawendi 美国 Massachusetts Institute of Technology 2007美国科学院院士;2023诺贝尔化学奖 One-Dimensional Highly-Confined CsPbBr3 Nanorods with Enhanced Stability: Synthesis and Spectroscopy
11. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by..
12. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Weak metastability of Al (x) Ga1-x N (x=13/24, 15/24, 17/24) shown by analyzing AlGaN grown on AlN w..
13. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Dual-peak electroluminescence spectra generated from Al (n) /12Ga1-n/12N (n=2, 3, 4) for AlGaN-based..
14. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching ..
15. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Germicidal ultraviolet LEDs: a review of applications and semiconductor technologies
16. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Effects of Current, Temperature, and Chip Size on the Performance of AlGaInP-Based Red Micro-Light-E..
17. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Limiting factors of GaN-on-GaN LED
18. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach
19. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation
20. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Discrete AlN mole fraction of n/12 (n=4-8) in Ga-rich zones functioning as electron pathways created..