Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal–organic vapor phase epitaxy-Reference-Cited by-同舟云学术

Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal–organic vapor phase epitaxy

Published:2022-08-22 Issue:8 Volume:121 Page:082106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hu Nan¹^ORCID,Avit Geoffrey²^ORCID,Pristovsek Markus²^ORCID,Honda Yoshio²³,Amano Hiroshi¹²³⁴

Affiliation:

1. Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464‐8603, Japan

2. Center of Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464‐8601, Japan

3. Department of Electronics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464‐8603, Japan

4. Akasaki Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464‐8603, Japan

Abstract

We studied indium incorporation into InGaN/GaN quantum wells grown by metal–organic vapor phase epitaxy by systematically varying of gallium and indium precursor flows on (0001), (10[Formula: see text]3), (11[Formula: see text]2), and (10[Formula: see text]0) orientations. The layer thickness and indium composition obtained from x-ray diffraction analysis were correlated with a model based on indium and gallium incorporation efficiencies. In the model, the indium incorporation efficiency is reproduced by the Langmuir surface coverage of gallium, indicating that indium atoms close to gallium atoms can be incorporated preferably.

Funder

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0088908

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5. Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells