High Performance pMOSFETs Using Si/Si<inf>1-x</inf>Ge<inf>x</inf>/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node-Reference-Cited by-同舟云学术

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High Performance pMOSFETs Using Si/Si1-xGex/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node

Published:2007 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE International Electron Devices Meeting
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Author:

Suthram S.,Majhi P.,Sun G.,Kalra P.,Harris H. R.,Choi K. J.,Heh D.,Oh J.,Kelly D.,Choi R.,Cho B.J.,Hussain M. M.,Smith C.,Banerjee S.,Tsai W.,Thompson S. E.,Tseng H. H.,Jammy R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4418847/4418848/04419049.pdf?arnumber=4419049

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of High-Ge-Content Si0.16Ge0.84Gate Stack by Low Pressure Oxidation;ECS Journal of Solid State Science and Technology;2018

2. Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices;Microelectronics Reliability;2017-05

3. Tunable biaxial in-plane compressive strain in a Si nanomembrane transferred on a polyimide film;Applied Physics Letters;2015-05-25

4. Wavy channel transistor for area efficient high performance operation;Applied Physics Letters;2013-04

5. Technology computer-aided design simulation study for a strained InGaAs channel n-type metal-oxide-semiconductor field-effect transistor with a high-k dielectric oxide layer and a metal gate electrode;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-05

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