Technology computer-aided design simulation study for a strained InGaAs channel n-type metal-oxide-semiconductor field-effect transistor with a high-k dielectric oxide layer and a metal gate electrode
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Published:2011-04-12
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ISSN:2166-2746
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Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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