Demonstration of Ge pMOSFETs with 6 Å EOT using TaN/ZrO<inf>2</inf>/Zr-cap/n-Ge(100) gate stack fabricated by novel vacuum annealing and in-situ metal capping method-Reference-Cited by-同舟云学术

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Demonstration of Ge pMOSFETs with 6 Å EOT using TaN/ZrO<inf>2</inf>/Zr-cap/n-Ge(100) gate stack fabricated by novel vacuum annealing and in-situ metal capping method

Published:2014-06 Issue: Volume: Page:1-2
ISSN:
Container-title:2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers
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Author:

Shin Yunsang,Chung Wonil,Seo Yujin,Lee Choong-Ho,Sohn Dong Kyun,Cho Byung Jin

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6886509/6894335/06894377.pdf?arnumber=6894377

Reference3 articles.

1. Ge-stabilized tetragonal ZrO2 as gate dielectric for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate

2. Temperature-dependent growth morphology of a semiconductor-metal interface: Ge/Ta(110)

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of the Ge-MDST instrument structure with an induced p-type channel;Mikroèlektronika;2024-10-27

2. Development of a Ge-MISFET Instrument Structure with an Induced p-Type Channel;Russian Microelectronics;2024-06

3. Effect of Yttrium Treatment on Germanium-Oxide-Based Interfacial Layer of Ge P-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated Through in Situ Plasma-Enhanced Atomic Layer Deposition;IEEE Transactions on Electron Devices;2024-03

4. High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing;Nanoscale Research Letters;2019-06-11

5. High-Mobility Ge pMOSFETs With Crystalline ZrO₂ Dielectric;IEEE Electron Device Letters;2019-03

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