Development of a Ge-MISFET Instrument Structure with an Induced p-Type Channel
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Publisher
Pleiades Publishing Ltd
Link
https://link.springer.com/content/pdf/10.1134/S1063739724600298.pdf
Reference17 articles.
1. Neizvestnyi, I.M., Germanium field-effect transistor (Ge MOSFET), Vestn. SibGUTI, 2009, no. 3, pp. 5–9.
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3. Shih-Han Yi, Kuei-Shu Chang-Liao, Tzung-Yu Wu, Chia-Wei Hsu, and Jiayi Huang, High performance Ge pMOSFETs with HfO2/Hf-Cap/GeOx gate stack and suitable post metal annealing treatments, IEEE Electron Device Lett., 2017, vol. 38, no. 5, pp. 544–547. https://doi.org/10.1109/led.2017.2686400
4. Liu, H., Han, G., Liu, Ya., and Hao, Yu., High mobility Ge pMOSFETs with ZrO2 dielectric: Impacts of post annealing, Nanoscale Res. Lett., 2019, vol. 14, no. 1, p. 202. https://doi.org/10.1186/s11671-019-3037-4
5. Shin, Yu., Chung, W., Seo, Yu., Lee, Ch.-H., Sohn, D.K., and Cho, B.J., Demonstration of Ge pMOSFETs with 6 Å EOT using TaN/ZrO2/Zr-cap/n-Ge(100) gate stack fabricated by novel vacuum annealing and in-situ metal capping method, 2014 Symp. on VLSI Technology (VLSI-Technology): Digest of Technical Papers, Honolulu, Hawaii, 2014, IEEE, 2014, pp. 82–83. https://doi.org/10.1109/vlsit.2014.6894377
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