Effect of Grooving Angle on Analog Performance of InGaSb Quantum Well p-MOSFET-Reference-Cited by-同舟云学术

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Effect of Grooving Angle on Analog Performance of InGaSb Quantum Well p-MOSFET

Published:2023-12-14 Issue: Volume:35 Page:1-2
ISSN:
Container-title:2023 8th International Conference on Computers and Devices for Communication (CODEC)
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Author:

Dasgupta Sumedha¹,Mondal Chandrima²,Biswas Abhijit³

Affiliation:

1. Future Institute of Technology,Electronics and Communication Engineering,Kolkata,India,700150

2. Jadavpur University,Electronics and Telecommunication Engineering,Kolkata,India,700032

3. University of Calcutta,Institute of Radio Physics and Electronics,Kolkata,India,700091

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10465675/10465678/10466135.pdf?arnumber=10466135

Reference8 articles.

1. Mobility enhancement in strained p-InGaSb quantum wells

2. III–V Complementary Metal–Oxide–Semiconductor Electronics on Silicon Substrates

3. On the Ballistic Performance of InGaSb XOI FET: Impact of Channel Thickness and Interface States

4. High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb

5. Highly scalable raised source/drain InAs quantum well MOSFETs exhibiting ION = 482gA/gm at IOFF=100 nA/gm and VDD=0.5 V;Lee;IEEE Electron Device Lett,2014

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