III–V Complementary Metal–Oxide–Semiconductor Electronics on Silicon Substrates-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

III–V Complementary Metal–Oxide–Semiconductor Electronics on Silicon Substrates

Published:2012-06-19 Issue:7 Volume:12 Page:3592-3595
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Nah Junghyo¹²³,Fang Hui¹²³,Wang Chuan¹²³,Takei Kuniharu¹²³,Lee Min Hyung¹²³,Plis E.⁴,Krishna Sanjay⁴,Javey Ali¹²³

Affiliation:

1. Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States

2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

3. Berkeley Sensor and Actuator Center, University of California, Berkeley, California 94720, United States

4. Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl301254z

Reference25 articles.

1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

2. Integrated nanoelectronics for the future

3. Power-constrained CMOS scaling limits

4. Fundamentals of Modern VLSI Devices

Cited by 78 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature behavior and logic circuit applications of InAs nanowire-based field-effect transistors;Materials Science in Semiconductor Processing;2024-04

2. Effect of Grooving Angle on Analog Performance of InGaSb Quantum Well p-MOSFET;2023 8th International Conference on Computers and Devices for Communication (CODEC);2023-12-14

3. InAs nanowire field-effect transistors: temperature dependence of electrical properties and digital electronic applications;2023 IEEE Nanotechnology Materials and Devices Conference (NMDC);2023-10-22

4. Design Considerations for 2-D Dirac-Source FETs—Part I: Basic Operation and Device Parameters;IEEE Transactions on Electron Devices;2022-08

5. Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si;IEEE Transactions on Electron Devices;2020-10

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3