Three-Dimensional Coaxial Through-Silicon-Via (TSV) Design-Reference-Cited by-同舟云学术

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Three-Dimensional Coaxial Through-Silicon-Via (TSV) Design

Published:2012-10 Issue:10 Volume:33 Page:1441-1443
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Xu Zheng,Lu Jian-Qiang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6310089/06275470.pdf?arnumber=6275470

Cited by 68 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling and Analysis of Wide Frequency Band Coaxial TSV Transmission Interconnect;Micromachines;2024-09-03

2. Design of Silicon Core Coaxial TSVs to Reduce Crosstalk Effects for 3D IC Applications;IETE Journal of Research;2024-08-06

3. Technology review of CNTs TSV in 3D IC and 2.5D packaging: Progress and challenges from an electrical viewpoint;Microelectronic Engineering;2024-07

4. Design Methodology of Through-Silicon via for Crosstalk Optimization Based on Impedance;2024 IEEE Joint International Symposium on Electromagnetic Compatibility, Signal & Power Integrity: EMC Japan / Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC Japan/APEMC Okinawa);2024-05-20

5. Research on the Reliability of Advanced Packaging under Multi-Field Coupling: A Review;Micromachines;2024-03-22

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