Trends and Future Challenges of 3D NAND Flash Memory
Author:
Affiliation:
1. Semiconductor R&D Center Samsung Electronics,Hwasung,Korea
2. Device Solution CTO Samsung Electronics,Hwasung,Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10145914/10145815/10145825.pdf?arnumber=10145825
Reference17 articles.
1. 3D NAND Falsh Status and Trends;heineck;IMW Tech Dig,2022
2. The Smallest Engine Transforming Humanity: The Past, Present, and Future
3. Ferroelectric field-effect transistors based on HfO2: a review
4. Prospective Innovation of DRAM, Flash, and Logic Technologies for Digital Transformation (DX) Era
5. Higly eliable Cell Characteristics with CSOB(Channelhole Sidewall ONO Butting) Scheme for 7th generation 3D-NAND;j kang;IEDM Tech Dig,2021
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