Improvement of warpage and leakage for 3D NAND flash memory-Reference-Cited by-同舟云学术

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Improvement of warpage and leakage for 3D NAND flash memory

Published:2024-06 Issue: Volume:176 Page:108294
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Zhang Kun,Zhou Wenxi,Li Tuo,Wang Sicong,Cheng Xiaomin^ORCID,Xia Zhiliang,Miao Xiangshui

Funder

National Major Science and Technology Projects of China

Publisher

Elsevier BV

Reference16 articles.

1. Trends and future challenges of 3D NAND flash memory;Shim,2023

2. How to improve overlay of highly deformed 3D NAND wafers;Kubis;Advances in Patterning Materials and Processes XXXVII,2020

3. A methodology for mechanical stress and wafer warpage minimization during 3D NAND fabrication;Kruv;Microelectron. Eng.,2022

4. Technology scaling challenges and opportunities of memory devices;Lee,2016

5. Reviewing the evolution of the NAND flash technology;Compagnoni;Proc. IEEE,2017

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