Selective Area Mass Transport Regrowth of Gallium Nitride
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaN power switches on the rise: Demonstrated benefits and unrealized potentials;Applied Physics Letters;2020-03-02
2. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces;Semiconductor Science and Technology;2016-04-14
3. Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN (x= 0.245–0.325) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers;Japanese Journal of Applied Physics;2010-04-20
4. Environmental stability of candidate dielectrics for GaN-based device applications;Journal of Applied Physics;2009-10
5. Low Temperature Selected Area Re-Growth of Ohmic Contacts for III-N FETs;MRS Proceedings;2005
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