Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN (x= 0.245–0.325) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference25 articles.
1. Power electronics on InAlN/(In)GaN: Prospect for a record performance
2. The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure
3. Spontaneous polarization and piezoelectric constants of III-V nitrides
4. Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices
5. InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor;Journal of Information Display;2016-04-02
2. Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors;Journal of Crystal Growth;2013-11
3. Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment;IEICE Transactions on Electronics;2013
4. Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristics;Applied Physics Letters;2011-05-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3