Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor-Reference-Cited by-同舟云学术

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Published:2016-04-02 Issue:2 Volume:17 Page:65-71
ISSN:1598-0316
Container-title:Journal of Information Display
language:en
Short-container-title:Journal of Information Display

Author:

Nam Yunyong,Kim Hee-Ok,Cho Sung Haeng,Hwang Chi-Sun,Kim Taeho,Jeon Sanghun,Ko Park Sang-Hee

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,General Materials Science

Link

http://www.tandfonline.com/doi/pdf/10.1080/15980316.2016.1160003

Reference22 articles.

1. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

4. Hydrogen as a Cause of Doping in Zinc Oxide

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