Perspective—Opportunities and Future Directions for Ga<sub>2</sub>O<sub>3</sub>-Reference-Cited by-同舟云学术

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Perspective—Opportunities and Future Directions for Ga₂O₃

Published:2017 Issue:5 Volume:6 Page:P356-P359
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Mastro Michael A.,Kuramata Akito,Calkins Jacob,Kim Jihyun,Ren Fan,Pearton S. J.

Funder

DOD | Defense Threat Reduction Agency (DTRA)

New Energy and Industrial Technology Development Organisation (NEDO)

Korea Institute of Energy Research (KIER)

Publisher

The Electrochemical Society

Reference34 articles.

1. Ultra-Wide Bandgap Materials and Device

2. High-quality β-Ga₂O₃ single crystals grown by edge-defined film-fed growth

3. Structural evaluation of defects in β-Ga₂O₃ single crystals grown by edge-defined film-fed growth process

4. Scaling-Up of Bulk β-Ga₂O₃Single Crystals by the Czochralski Method

5. Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga₂O₃Layers Grown by MOVPE on (010)-Oriented Substrates

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1. Atomic interface structure and electronic properties at nanoscale rotated crystal in Ga2O3 homoepitaxial film;Applied Surface Science;2025-09

2. Effects of crystal and melt transparency on twisting of β-Ga2O3 crystals grown by the Czochralski method;Journal of Crystal Growth;2025-08

3. Improved thermal conductivity of Ga2O3 thin films grown on polished polycrystalline diamond by thermal annealing;Materials Science and Engineering: B;2025-07

4. ZnO:(B, Ga)/Au electrodes for improved Ohmic contacts on ultrawide-bandgap Ga2O3 films;Surface and Coatings Technology;2025-06

5. 2-inch diameter (010) principal-face β-Ga₂O₃ single crystals grown by EFG method;Journal of Semiconductors;2025-06-01

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