Scaling-Up of Bulk β-Ga2O3Single Crystals by the Czochralski Method-Reference-Cited by-同舟云学术

Scaling-Up of Bulk β-Ga2O3Single Crystals by the Czochralski Method

Published:2016-09-01 Issue:2 Volume:6 Page:Q3007-Q3011
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Galazka Zbigniew,Uecker Reinhard,Klimm Detlef,Irmscher Klaus,Naumann Martin,Pietsch Mike,Kwasniewski Albert,Bertram Rainer,Ganschow Steffen,Bickermann Matthias

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference45 articles.

1. Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

2. Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3

3. Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3thin films grown by pulsed laser deposition

4. Comparison of Schottky contacts on β-gallium oxide thin films and bulk crystals

5. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

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