Growth mechanism for single-crystalline thin film of InGaO3(ZnO)5 by reactive solid-phase epitaxy-Reference-Cited by-同舟云学术

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Growth mechanism for single-crystalline thin film of InGaO3(ZnO)5 by reactive solid-phase epitaxy

Published:2004-05-15 Issue:10 Volume:95 Page:5532-5539
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nomura Kenji,Ohta Hiromichi,Ueda Kazushige,Kamiya Toshio,Orita Masahiro,Hirano Masahiro,Suzuki Toshiyuki,Honjyo Chizuru,Ikuhara Yuichi,Hosono Hideo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1712010

Reference37 articles.

1. Invisible circuits

2. P-type electrical conduction in transparent thin films of CuAlO2

3. A ferroelectric transparent thin‐film transistor

4. Fabrication of transparent p–n heterojunction thin film diodes based entirely on oxide semiconductors

5. Fabrication of all oxide transparent p–n homojunction using bipolar CuInO2 semiconducting oxide with delafossite structure

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