Quantitative correlation of hot electron emission to Auger recombination in the active region of c-plane blue III-N LEDs
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106-5050, USA
2. Laboratoire de Physique de la Matière Condensée, CNRS, Ecole Polytechnique, IP Paris, 91128 Palaiseau, France
Funder
Simons Foundation
National Science Foundation
Sandia National Laboratories
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0054636
Reference17 articles.
1. InGaN light-emitting diodes: Efficiency-limiting processes at high injection
2. Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
3. Efficiency droop in light-emitting diodes: Challenges and countermeasures
4. Rate equation analysis of efficiency droop in InGaN light-emitting diodes
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