Facet analysis of truncated pyramid semi-polar GaN grown on Si(100) with rare-earth oxide interlayer-Reference-Cited by-同舟云学术

Facet analysis of truncated pyramid semi-polar GaN grown on Si(100) with rare-earth oxide interlayer

Published:2016-09-08 Issue:10 Volume:120 Page:105301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Grinys Tomas¹^ORCID,Dargis Rytis²,Frentrup Martin³,Jucevičienė Agnė Kalpakovaitė¹,Badokas Kazimieras¹,Stanionytė Sandra⁴,Clark Andrew²,Malinauskas Tadas¹

Affiliation:

1. Institute of Applied Research, Vilnius University, Saulėtekio 10, 10223 Vilnius, Lithuania

2. Translucent Inc., 952 Commercial St., Palo Alto, California 94303, USA

3. The Cambridge Centre for Gallium Nitride, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

4. Center for Physical Sciences and Technology, Savanoriu av. 231, 02300 Vilnius, Lithuania

Funder

Lietuvos Mokslo Taryba (Research Council of Lithuania)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference23 articles.

1. Microstructural Characterization of Semipolar GaN Templates and Epitaxial-Lateral-Overgrown Films Deposited onM-Plane Sapphire by Metalorganic Vapor Phase Epitaxy

2. Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

3. Understanding and controlling heteroepitaxy with the kinetic Wulff plot: A case study with GaN

4. GaN-based epitaxy on silicon: stress measurements

5. Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(lll) Substrate

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