Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(lll) Substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/276/i=1/a=012094/pdf
Reference24 articles.
1. Dislocation generation in GaN heteroepitaxy
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5. High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
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1. Growth conditions of semi and non-polar GaN on Si with Er2O3 buffer layer;Journal of Alloys and Compounds;2017-11
2. Facet analysis of truncated pyramid semi-polar GaN grown on Si(100) with rare-earth oxide interlayer;Journal of Applied Physics;2016-09-08
3. GaN growth on Si with rare-earth oxide distributed Bragg reflector structures;Journal of Crystal Growth;2015-08
4. Novel Oxide Buffer for Scalable GaN-on-Silicon;ECS Transactions;2014-08-08
5. Synthesis of homogeneous and high-quality GaN films on Cu(111) substrates by pulsed laser deposition;CrystEngComm;2014
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