Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas-Reference-Cited by-同舟云学术

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Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas

Published:2013-03-11 Issue:10 Volume:102 Page:103507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mak W. Y.,Sfigakis F.,Das Gupta K.,Klochan O.,Beere H. E.,Farrer I.,Griffiths J. P.,Jones G. A. C.,Hamilton A. R.,Ritchie D. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4795613

Reference35 articles.

1. Origin of switching noise inGaAs∕AlxGa1−xAslateral gated devices

2. InSituReduction of Charge Noise inGaAs/AlxGa1−xAsSchottky-Gated Devices

3. Reduction method for low-frequency noise of GaAs junction field-effect transistor at a cryogenic temperature

4. Effect of the surface on the electronic properties of a two-dimensional electron gas as measured by the quantum Hall effect

5. Scattering mechanism in modulation-doped shallow two-dimensional electron gases

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3. Effects of biased and unbiased illuminations on two-dimensional electron gases in dopant-free GaAs/AlGaAs;Physical Review B;2022-02-07

4. Non-adiabatic single-electron pumps in a dopant-free GaAs/AlGaAs 2DEG;Applied Physics Letters;2021-09-13

5. Ultra‐Shallow All‐Epitaxial Aluminum Gate GaAs/Al x Ga 1− x As Transistors with High Electron Mobility;Advanced Functional Materials;2021-08-19

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