Ultra‐Shallow All‐Epitaxial Aluminum Gate GaAs/Al x Ga 1− x As Transistors with High Electron Mobility-Reference-Cited by-同舟云学术

Ultra‐Shallow All‐Epitaxial Aluminum Gate GaAs/Al x Ga 1− x As Transistors with High Electron Mobility

Published:2021-08-19 Issue:3 Volume:32 Page:2104213
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Ashlea Alava Yonatan¹²,Wang Daisy Q.¹²,Chen Chong³,Ritchie David A.³,Ludwig Arne⁴,Ritzmann Julian⁴,Wieck Andreas D.⁴,Klochan Oleh¹²⁵,Hamilton Alexander R.¹²^ORCID

Affiliation:

1. School of Physics University of New South Wales Sydney New South Wales 2052 Australia

2. ARC Centre of Excellence for Future Low‐Energy Electronics Technologies University of New South Wales Sydney New South Wales 2052 Australia

3. Cavendish Laboratory University of Cambridge Cambridge CB3 0HE UK

4. Lehrstuhl für Angewandte Festkörperphysik Ruhr‐Universität Bochum D‐44780 Bochum Germany

5. School of Science University of New South Wales Canberra ACT 2612 Australia

Funder

Engineering and Physical Sciences Research Council

Australian Research Council

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202104213

Reference34 articles.

1. Conductance quantization above 30 K in GaAlAs shallow-etched quantum point contacts smoothly joined to the background 2DEG

2. Quantum point contact with large subband energy spacings

3. Transistor sizing for low power CMOS circuits

4. Billion-transistor architectures: there and back again

5. Distinguishing impurity concentrations in GaAs and AlGaAs using very shallow undoped heterostructures

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