Stability of carbon and beryllium‐doped base GaAs/AlGaAs heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105623
Reference7 articles.
1. Recombination‐enhanced impurity diffusion in Be‐doped GaAs
2. New 16-QAM trellis codes for fading channels
3. Implant isolation of GaAs‐AlGaAs heterojunction bipolar transistor structures
4. Resonance ionization mass spectrometry of AlxGa_1−xAs: depth resolution, sensitivity, and matrix effects
5. A Monte Carlo computer program for the transport of energetic ions in amorphous targets
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