Study of direct current characteristics of carbon-doped GaInP/GaAs heterojunction bipolar transistor grown by solid source molecular beam epitaxy
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Published:2004
Issue:2
Volume:22
Page:838
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:en
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Zhang R.,Lew K. L.,Yoon S. F.,Tan K. H.,Sun Z. Z.
Publisher
American Vacuum Society
Subject
General Engineering