The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120263
Reference12 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
3. Analysis of Real-Time Monitoring Using Interference Effects
4. Analysis of Real-Time Monitoring Using Interference Effects
5. The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition
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