Effect of etching stop layer on characteristics of amorphous IGZO thin film transistor fabricated at low temperature
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4798305
Reference13 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Present status of amorphous In–Ga–Zn–O thin-film transistors
3. Transparent, high mobility InGaZnO thin films deposited by PLD
4. Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors
5. Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors
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