Sub-μm Gate-All-Around-Like Amorphous-InGaZnO Transistors With Record-High f<sub>T</sub> of 2.09 GHz-Reference-Cited by-同舟云学术

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Sub-μm Gate-All-Around-Like Amorphous-InGaZnO Transistors With Record-High f_T of 2.09 GHz

Published:2024-08 Issue:8 Volume:71 Page:4710-4716
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chang Shu-Wei¹^ORCID,Hu Hsin-Hui²^ORCID,Wu Chen-Wei²,Lu Wen-Hsiang³^ORCID,Lee Wen-Hsi¹^ORCID,Lee Yao-Jen⁴^ORCID

Affiliation:

1. Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan

2. Department of Electronic Engineering, National Taipei University of Technology, Taipei, Taiwan

3. Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan

4. Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Funder

Ministry of Science and Technology, Taiwan,

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10609410/10589547.pdf?arnumber=10589547

Reference40 articles.

1. Recent progress in transparent oxide semiconductors: Materials and device application

2. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

3. Effect of etching stop layer on characteristics of amorphous IGZO thin film transistor fabricated at low temperature

4. Thin-film transistors

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