42.4L: Late-News Paper: 4 inch QVGA AMOLED Driven by the Threshold Voltage Controlled Amorphous GIZO (Ga[sub 2]O[sub 3]-In[sub 2]O[sub 3]-ZnO) TFT-Reference-Cited by-同舟云学术

42.4L: Late-News Paper: 4 inch QVGA AMOLED Driven by the Threshold Voltage Controlled Amorphous GIZO (Ga[sub 2]O[sub 3]-In[sub 2]O[sub 3]-ZnO) TFT

Published:2008 Issue:1 Volume:39 Page:633
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest

Author:

Son Kyoung-Seok,Kim Tae-Sang,Jung Ji-Sim,Ryu Myung-Kwan,Park Kyung-Bae,Yoo Byung-Wook,Kim Jung-Woo,Lee Young-Gu,Kwon Jang-Yeon,Lee Sang-Yoon,Kim Jong-Min

Publisher

Wiley

Reference6 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide

3. Transparent thin-film transistors with zinc indium oxide channel layer

4. Recent advances in processing of ZnO

5. Passivation of zinc–tin–oxide thin-film transistors

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