Selective area growth rates of III-V nanowires-Reference-Cited by-同舟云学术

Selective area growth rates of III-V nanowires

Published:2021-09-01 Issue:9 Volume:5 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Cachaza Martin Espiñeira^ORCID,Christensen Anna Wulff,Beznasyuk Daria,Særkjær Tobias,Madsen Morten Hannibal,Tanta Rawa,Nagda Gunjan,Schuwalow Sergej,Krogstrup Peter

Funder

Horizon 2020

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.5.094601/fulltext

Reference44 articles.

1. Majorana fermions in semiconductor nanowires: fundamentals, modeling, and experiment

2. Scalable designs for quasiparticle-poisoning-protected topological quantum computation with Majorana zero modes

3. Majorana box qubits

4. Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures

5. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

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