Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices-Reference-Cited by-同舟云学术

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Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Published:2024-08-13 Issue:16 Volume:7 Page:19065-19074
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Zendrini Michele¹^ORCID,Dubrovskii Vladimir²,Rudra Alok¹,Dede Didem¹,Fontcuberta i Morral Anna¹³^ORCID,Piazza Valerio¹

Affiliation:

1. Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne CH-1015, Switzerland

2. Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, St. Petersburg 199034, Russia

3. Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne CH-1015, Switzerland

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Saint Petersburg State University

National Center of Competence in Research Quantum Science and Technology

European Cooperation in Science and Technology

Piaget Scientific Award

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.4c02765

Reference70 articles.

1. Synthesis and Applications of III–V Nanowires

2. Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions

3. Epitaxially Grown InP Micro-Ring Lasers

4. Design of InAs nanosheet arrays with ultrawide polarization-independent high absorption for infrared photodetection

5. Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires

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