Lattice Location of Mg in GaN: A Fresh Look at Doping Limitations-Reference-Cited by-同舟云学术

Lattice Location of Mg in GaN: A Fresh Look at Doping Limitations

Published:2017-03-01 Issue:9 Volume:118 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Wahl U.,Amorim L. M.,Augustyns V.,Costa A.,David-Bosne E.,Lima T. A. L.,Lippertz G.,Correia J. G.,da Silva M. R.,Kappers M. J.,Temst K.,Vantomme A.,Pereira L. M. C.

Funder

Fundação para a Ciência e a Tecnologia

Fonds Wetenschappelijk Onderzoek

KU Leuven

European Commission

Horizon 2020 Framework Programme

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.118.095501/fulltext

Reference45 articles.

1. Critical Assessment 23: Gallium nitride-based visible light-emitting diodes

2. Group III-nitride lasers: a materials perspective

3. Gallium nitride devices for power electronic applications

4. Merits of gallium nitride based power conversion

5. III-nitrides for energy production: photovoltaic and thermoelectric applications

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-principles study of recombination-enhanced migration of an interstitial magnesium in gallium nitride;Physical Review B;2024-08-16

2. Observation of 2D-magnesium-intercalated gallium nitride superlattices;Nature;2024-06-05

3. Lateral and vertical diffusion of magnesium in ion-implanted Halide Vapor Phase Epitaxy gallium nitride;Materials Science in Semiconductor Processing;2024-03

4. High-performance normally off AlGaN/GaN high electron mobility transistor with p-type h-BN cap layer;Journal of Vacuum Science & Technology B;2023-10-20

5. Overcoming the compensation of acceptors in GaN:Mg by defect complex formation;APL Materials;2023-08-01