Lateral and vertical diffusion of magnesium in ion-implanted Halide Vapor Phase Epitaxy gallium nitride

Author:

Sierakowski KacperORCID,Jaroszynski Piotr,Jakiela Rafal,Fijalkowski Michal,Sochacki Tomasz,Iwinska Malgorzata,Turek Marcin,Lorenz Katharina,Bockowski Michal

Funder

Narodowe Centrum Nauki

Narodowe Centrum Badań i Rozwoju

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference40 articles.

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4. Figures-of-Merit of lateral GaN power devices: modeling and comparison of HEMTs and PSJs;Nela;IEEE Journal of the Electron Devices Society,2021

5. High linearity and high gain performance of N-polar GaN MIS-HEMT at 30 GHz;Shrestha;IEEE Electron. Device Lett.,2020

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