Nonvolatile spin field effect transistor based on <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>VSi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">N</mml:mi><mml:mn>4</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi>Sc</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>CO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math> multiferroic heterostructure-Reference-Cited by-同舟云学术

Nonvolatile spin field effect transistor based on VSi2N4/Sc2CO2 multiferroic heterostructure

Published:2024-05-01 Issue:20 Volume:109 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Zhang Xian¹,Liu Bang²,Huang Junsheng²,Cao Xinwei¹,Zhang Yunzhe¹,Guo Zhi-Xin²^ORCID

Affiliation:

1. College of Mechanical and Materials Engineering, Xi'an University, Xi'an 710065, China

2. State Key Laboratory for Mechanical Behavior of Materials and School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China

Funder

Ministry of Science and Technology of the People's Republic of China

Natural Science Foundation of Shaanxi Province

National Natural Science Foundation of China

Science Fund for Distinguished Young Scholars of Shaanxi Province

Science and Technology Plan of Xi'an

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.109.205105/fulltext

Reference33 articles.

1. Electromigration in three-dimensional integrated circuits

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3. Colloquium : Spintronics in graphene and other two-dimensional materials

4. Effects of the substrate-surface reconstruction and orientation on the spin valley polarization in MoTe2/EuO

5. Prediction of giant and ideal Rashba-type splitting in ordered alloy monolayers grown on a polar surface

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1. Nonvolatile control of valley related properties and valley-contrasting transport in multiferroic van der Waals heterostructures;Applied Physics Letters;2024-08-19

2. Nonvolatile spin field effect transistor based on VSi2N4/Sc2CO2 multiferroic heterostructure;Physical Review B;2024-05-01

3. The electronic and magnetic properties modulated by ferroelectric polarization switching in two-dimensional VSeTe/Sc₂CO₂ van der Waals heterostructures;Physical Chemistry Chemical Physics;2024