Aluminum dihydride complexes and their unexpected application in atomic layer deposition of titanium carbonitride films-Reference-Cited by-同舟云学术

Aluminum dihydride complexes and their unexpected application in atomic layer deposition of titanium carbonitride films

Published:2018 Issue:32 Volume:47 Page:10897-10905
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Blakeney Kyle J.¹²³⁴,Martin Philip D.¹²³⁴,Winter Charles H.¹²³⁴^ORCID

Affiliation:

1. Department of Chemistry

2. Wayne State University

3. Detroit

4. USA

Abstract

Aluminum dihydride complexes containing amido-amine ligands were synthesized and evaluated as potential reducing precursors for thermal atomic layer deposition (ALD).

Funder

BASF Corporation

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/DT/C8DT02508H

Reference51 articles.

1. Precursors as enablers of ALD technology: Contributions from University of Helsinki

2. Metal ALD and pulsed CVD: Fundamental reactions and links with solution chemistry

3. Precursors and chemistry for the atomic layer deposition of metallic first row transition metal films

4. Advances in the deposition chemistry of metal-containing thin films using gas phase processes

5. Atomic and molecular layer deposition: off the beaten track

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