High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach-Reference-Cited by-同舟云学术

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Published:2022-10-19 Issue:43 Volume:14 Page:48857-48867
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hur Jae Seok¹^ORCID,Kim Min Jae¹,Yoon Seong Hun¹,Choi Hagyoung²,Park Chi Kwon³,Lee Seung Hee⁴,Cho Min Hee⁴,Kuh Bong Jin⁴,Jeong Jae Kyeong¹^ORCID

Affiliation:

1. Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea

2. NexusBe, Jeonju-si 55069, Jeollabuk-do, Republic of Korea

3. Lake Materials, Sejong-si 30003, Chungcheongnam-do, Republic of Korea

4. Semiconductor R&D Center, Samsung Electronics Co., Hwaseong-si 18448, Gyeonggi-do, Republic of Korea

Funder

Samsung

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c13489

Reference74 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips

3. Development of 55” 4K UHD OLED TV employing the internal gate IC with high reliability and short channel IGZO TFTs

4. 21‐3: Invited Paper: High Quality 8K4K Displays driven by Oxide Semiconductor Thin Film Transistor in the Generation 11 Equipment

5. P‐1: World's First 85‐in. 8K4K 120Hz 1G1D LCD with Oxide TFT Using Four‐Mask Array Process

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