Growth of high quality polycrystalline InGaO thin films by spray pyrolysis for coplanar thin-film transistors on polyimide substrate-Reference-Cited by-同舟云学术

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Growth of high quality polycrystalline InGaO thin films by spray pyrolysis for coplanar thin-film transistors on polyimide substrate

Published:2024-10 Issue: Volume:1002 Page:175203
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Rabbi Md. Hasnat,Ali Arqum,Park Chanju,Bae Jinbaek,Jang Jin

Funder

MOTIE

Publisher

Elsevier BV

Reference69 articles.

1. Present status of amorphous In-Ga-Zn-O thin-film transistors;Kamiya;Sci. Technol. Adv. Mater.,2010

2. Top interface engineering of flexible oxide thin-film transistors by splitting active layer;Lee;Adv. Funct. Mater.,2017

3. Polycrystalline InGaO thin-film transistors with coplanar structure exhibiting average mobility of ≈78 cm2 v-1 s-1 and excellent stability for replacing current poly-si thin-film transistors for organic light-emitting diode displays;Rabbi;Small Methods,2022

4. TFT technology: advancements and opportunities for improvement;Wager;Inf. Disp.,2020

5. High performance amorphous in 0.5 ga 0.5 o thin-film transistor embedded with nanocrystalline In 2 O 3 dots for flexible display application;Rabbi;Adv. Electron. Mater.,2023

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