InGaN/GaN Blue Light Emitting Diodes Using Freestanding GaN Extracted from a Si Substrate-Reference-Cited by-同舟云学术

InGaN/GaN Blue Light Emitting Diodes Using Freestanding GaN Extracted from a Si Substrate

Published:2018-02-05 Issue:4 Volume:5 Page:1453-1459
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Lee Moonsang¹^ORCID,Yang Mino²,Song Keun Man³,Park Sungsoo⁴⁵

Affiliation:

1. Korea Basic Science Institute, Daejeon, 169-148, Republic of Korea

2. Korea Basic Science Institute, Seoul Center, Seoul, 5, Republic of Korea

3. Device Development Department 2, Technology Development Division, Korea Advanced Nano Fab Center, 109 Gwanggyo-ro, Yeongtong-gu, Suwon-Si, Gyeonggi-do, 443-270, Republic of Korea

4. Analytical Laboratory of Advanced Ferroelectric Crystals, Jeonju University, Jeonju, 303, Republic of Korea

5. Department of Science Education, Jeonju University, Jeonju, 303, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.7b01453

Reference40 articles.

1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

2. Transferable single-crystal GaN thin films grown on chemical vapor-deposited hexagonal BN sheets

3. Epitaxial lateral overgrowth on the air void embedded SiO2 mask for InGaN light-emitting diodes

4. Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors

5. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Narrow-band n-GaN/n-Si isotype heterojunction photodiode: A simplified approach for photodiode development;Sensors and Actuators A: Physical;2024-08

2. Multi-color emission based on InGaN/GaN micro-truncated pyramid arrays;AIP Advances;2024-05-01

3. Monolithic III-nitride photonic circuit on a single chip;Applied Physics Letters;2023-12-25

4. In Situ TEM Characterization and Modulation for Phase Engineering of Nanomaterials;Chemical Reviews;2023-12-06

5. Improving performances of ultra-small size (1–20 μ m) InGaN red micro-LEDs by growing on freestanding GaN substrates;Applied Physics Letters;2023-12-04