Narrow-band n-GaN/n-Si isotype heterojunction photodiode: A simplified approach for photodiode development-Reference-Cited by-同舟云学术

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Narrow-band n-GaN/n-Si isotype heterojunction photodiode: A simplified approach for photodiode development

Published:2024-08 Issue: Volume:374 Page:115466
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Olkun Ali,Kaplan Hüseyin Kaan,Akay Sertan Kemal,Ahmetoğlu Muhitdin,Pat Suat,Erdoğan Nursev

Publisher

Elsevier BV

Reference72 articles.

1. High-power hybrid GaN-based green laser diodes with ITO cladding layer;Hu;Photonics Res,2020

2. GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz;Li;IEEE Electron Device Lett.,2020

3. Ultrathin polymer nanofibrils for solar-blind deep ultraviolet light photodetectors application;Qiu;Nano Lett.,2020

4. High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells;Li;J. Mater. Chem. C. Mater.,2020

5. InGaN/GaN blue light emitting diodes using freestanding GaN extracted from a Si substrate;Lee;ACS Photonics,2018

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties;Materials Letters;2024-12

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