Atomic Precision Processing of Two-Dimensional Materials for Next-Generation Microelectronics-Reference-Cited by-同舟云学术

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Atomic Precision Processing of Two-Dimensional Materials for Next-Generation Microelectronics

Published:2024-08-06 Issue:33 Volume:18 Page:21614-21622
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Yoo Jinkyoung¹^ORCID,Nam Chang-Yong²^ORCID,Bussmann Ezra³

Affiliation:

1. Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States

2. Center for Functional Materials, Brookhaven National Laboratory, Upton, New York 11973, United States

3. Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States

Funder

Los Alamos National Laboratory

Office of Science

Brookhaven National Laboratory

Sandia National Laboratories

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.4c04908

Reference82 articles.

1. 2D materials for future heterogeneous electronics

2. Process integration and future outlook of 2D transistors

3. Two-dimensional devices and integration towards the silicon lines

4. Chung, Y. Y.; Chou, B. J.; Hsu, C. F.; Yun, W. S.; Li, M. Y.; Su, S. K.; Liao, Y. T.; Lee, M. C.; Huang, G. W.; Liew, S. L. First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410μA μm ID 1V VD at 40 nm gate length. In 2022 International Electron Devices Meeting (IEDM); IEEE, 2022; p 34.5.1–34.5.4.

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