First Demonstration of GAA Monolayer-MoS<sub>2</sub> Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length-Reference-Cited by-同舟云学术

First Demonstration of GAA Monolayer-MoS₂ Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Chung Yun-Yan¹,Chou Bo-Jhih²,Hsu Chen-Feng¹,Yun Wei-Sheng¹,Li Ming-Yang¹,Su Sheng-Kai¹,Liao Yu-Tsung²,Lee Meng-Chien²,Huang Guo-Wei³,Liew San-Lin³,Shen Yun-Yang⁴,Chang Wen-Hao⁴,Chen Chien-Wei⁵,Kei Chi-Chung⁵,Wang Han⁶,Philip Wong H.-S.¹,Lee T. Y.¹,Chien Chao-Hsin²,Cheng Chao-Ching¹,Radu Iuliana P.¹

Affiliation:

1. Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,Taiwan

2. Institute of Electronics, National Yang Ming Chiao Tung University,Hsinchu,Taiwan

3. Taiwan Semiconductor Manufacturing Company,Failure Analysis Division,Hsinchu,Taiwan

4. National Yang Ming Chiao Tung University,Department of Electrophysics,Hsinchu,Taiwan

5. Taiwan Instrument Research Institute,National Applied Research Laboratories,Hsinchu,Taiwan

6. Taiwan Semiconductor Manufacturing Company,Corporate Research,San Jose,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019563.pdf?arnumber=10019563

Reference9 articles.

1. Ultralow contact resistance between semimetal and monolayer semiconductors

2. Ultrasoft silicon nanomembranes: thickness-dependent effective elastic modulus

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