Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance-Reference-Cited by-同舟云学术

Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance

Published:2019-10-11 Issue:43 Volume:11 Page:40826-40834
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Mandal Soumen^ORCID,Yuan Chao¹,Massabuau Fabien²^ORCID,Pomeroy James W.¹,Cuenca Jerome^ORCID,Bland Henry,Thomas Evan,Wallis David²,Batten Tim³^ORCID,Morgan David⁴^ORCID,Oliver Rachel²,Kuball Martin¹,Williams Oliver A.

Affiliation:

1. Center for Device Thermography and Reliability, University of Bristol, Bristol BS8 1TL, U.K.

2. Department of Materials Science & Metallurgy, University of Cambridge, Cambridge CB3 0FS, U.K.

3. Renishaw plc., Wotton-under-Edge GL12 7DW, U.K.

4. Cardiff Catalysis Institute, School of Chemistry, Cardiff University, Cardiff CF10 3AT, U.K.

Funder

Engineering and Physical Sciences Research Council

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Link

http://pubs.acs.org/doi/pdf/10.1021/acsami.9b13869

Reference61 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. GaN-Based RF Power Devices and Amplifiers

3. Reliability assessment of AlGaN/GaN HEMT technology on SiC for 48V applications

4. Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing

5. Self-heating in high-power AlGaN-GaN HFETs

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