Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing
Author:
Funder
MCM ITP programme
Publisher
Elsevier BV
Reference11 articles.
1. Reliability data's of 0.5μm AlGaN/GaN on SiC technology qualification;Lambert;Microelectron. Reliab.,2012
2. Field Dependent Self-heating Effects in High-power AlGaN/GaN HEMTs;Hosch,2009
3. Integrated micro-raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structure;Sarua;IEEE Trans. Electron Devices,2006
4. Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy;Batten;J. Appl. Phys.,2009
5. Micro-Raman temperature measurements for electric field assessment in active AlGaN–GaN HFETs;Rajasingam;IEEE Electron Device Lett.,2004
Cited by 59 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal Characterization of Ultrawide Bandgap Semiconductor Devices: A Review;Advanced Physics Research;2025-06-23
2. Emerging thermal metrology for ultra-wide bandgap semiconductor devices;Applied Physics Letters;2025-05-19
3. Simulation and experimental investigation of liquid-cooling thermal management for high-bandwidth co-packaged optics;Frontiers of Optoelectronics;2025-05-14
4. Optimizing interfacial thermal resistance in GaN/AlN heterostructures: The impact of AlN layer thickness;International Journal of Heat and Mass Transfer;2025-04
5. Quantitative characterization of self-heating effects in GaN-on-diamond HEMTs with 3C-SiC interfacial layer;Semiconductor Science and Technology;2025-03-27
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.7亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2025 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3