Large Area, Ultrathin, and Transparent InGaZnO Films from Printing of Liquid Ga–In–Zn Alloys for Thin Film Transistors-Reference-Cited by-同舟云学术

Large Area, Ultrathin, and Transparent InGaZnO Films from Printing of Liquid Ga–In–Zn Alloys for Thin Film Transistors

Published:2023-09-20 Issue:19 Volume:6 Page:18083-18092
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Du Bangdeng¹,Li Qian¹,Wei Jiang²,Liu Jing¹³^ORCID

Affiliation:

1. Beijing Key Lab of Cryo-Biomedical Engineering and Key Lab of Cryogenics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China

2. Institute of Applied Physics, Jiangxi Academy of Sciences, Nanchang 330000, China

3. Department of Biomedical Engineering, School of Medicine, Tsinghua University, Beijing 100084, P. R. China

Funder

Jiangxi Academy of Sciences

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c03362

Reference43 articles.

1. How we made the IGZO transistor

2. The development of flexible integrated circuits based on thin-film transistors

3. Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

4. Corrugated Heterojunction Metal-Oxide Thin-Film Transistors with High Electron Mobility via Vertical Interface Manipulation

5. Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

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