Self-Catalyzed GaAsP Nanowires Grown on Silicon Substrates by Solid-Source Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Self-Catalyzed GaAsP Nanowires Grown on Silicon Substrates by Solid-Source Molecular Beam Epitaxy

Published:2013-08-02 Issue:8 Volume:13 Page:3897-3902
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Zhang Yunyan¹,Aagesen Martin²³,Holm Jeppe V.²,Jørgensen Henrik I.²,Wu Jiang¹,Liu Huiyun¹

Affiliation:

1. Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom

2. SunFlake A/S, Universitetsparken 5, Copenhagen DK-2100, Denmark

3. Gasp Solar ApS, Gregersensvej 7, Taastrup DK-2630, Denmark

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl401981u

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5. Relaxed lattice-mismatched growth of III–V semiconductors

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