The Size Effects of Point Defect on the Mechanical Properties of Monocrystalline Silicon: A Molecular Dynamics Study

Abstract

The molecular dynamics method was used to simulate the fracture process of monocrystalline silicon with different sizes of point defect under a constant strain rate. The mechanism of the defect size on the mechanical properties of monocrystalline silicon was also investigated. The results suggested that the point defect significantly reduces the yield strength of monocrystalline silicon. The relationships between the yield strength variation and the size of point defect fitted an exponential function. By statistically analyzing the internal stress in monocrystalline silicon, it was found that the stress concentration induced by the point defect led to the decrease in the yield strength. A comparison between the theoretical strength given by the four theories of strength and actual strength proved that the Mises theory was the best theory of strength to describe the yield strength of monocrystalline silicon. The dynamic evolution process of Mises stress and dislocation showed that the fracture was caused by the concentration effect of Mises stress and dislocation slip. Finally, the fractured microstructures were similar to a kind of two-dimensional grid which distributed along the cleavage planes while visualizing the specimens. The results of this article provide a reference for evaluating the size effects of point defects on the mechanical properties of monocrystalline silicon.