Misorientation and Temperature Dependence of Small Angle Twist Grain Boundaries in Silicon: Atomistic Simulation of Directional Growth-Reference-Cited by-同舟云学术

Misorientation and Temperature Dependence of Small Angle Twist Grain Boundaries in Silicon: Atomistic Simulation of Directional Growth

Published:2023-03-23 Issue:4 Volume:23 Page:2893-2904
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Wan Wei¹²,Sun Zhipeng³,Xiong Zhenkang⁴,Tang Changxin²^ORCID

Affiliation:

1. Institute for Advanced Study, Nanchang University, Nanchang 330031, China

2. Institute of Photovoltaics, Nanchang University, Nanchang 330031, China

3. School of Electrical and Mechanical Engineering, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528400, China

4. Department of Science and Technology, Nanchang University College of Science and Technology, Jiujiang 332020, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00056

Reference90 articles.

1. Thibault, J.; Rouviere, J. L.; Bourret, A. Grain boundaries in semiconductors. Material Science and Technology, 1991, vol 4; p 321.

2. Grain Boundaries in Polycrystalline Silicon

3. Defect engineering in cast mono‐like silicon: A review

4. High-quality multi-crystalline silicon growth for solar cells by grain-controlled directional solidification

5. Computational studies of grain boundaries in covalent materials

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