Random Dopant Fluctuation-Induced Variability in n-Type Junctionless Dual-Metal Gate FinFETs-Reference-Cited by-同舟云学术

Random Dopant Fluctuation-Induced Variability in n-Type Junctionless Dual-Metal Gate FinFETs

Published:2019-03-03 Issue:3 Volume:8 Page:282
ISSN:2079-9292
Container-title:Electronics
language:en
Short-container-title:Electronics

Author:

Dai Liang,Lü Weifeng^ORCID,Lin Mi

Abstract

We investigate the effect of random dopant fluctuation (RDF)-induced variability in n-type junctionless (JL) dual-metal gate (DMG) fin field-effect transistors (FinFETs) using a 3D computer-aided design simulation. We show that the drain voltage (VDS) has a significant impact on the electrostatic integrity variability caused by RDF and is dependent on the ratio of gate lengths. The RDF-induced variability also increases as the length of control gate near the source decreases. Our simulations suggest that the proportion of the gate metal near the source to the entire gate should be greater than 0.5.

Funder

National Natural Science Foundation of China

Zhejiang provincial Natural Science Foundation of China

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering

Link

https://www.mdpi.com/2079-9292/8/3/282/pdf

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